WAKEFIELD, Mass. USA – Jan. 27, 2016 – The 3MF Consortium, an industry association created to develop and promote a new full-fidelity file format for 3D printing, today announced that GE Global Research, the central technology development hub of GE (NYSE: GE), which is pioneering uses for additive manufacturing, has joined at the Founding membership level.
Scientists and engineers in GE’s Additive Manufacturing Lab have been pioneers in developing new additive produced components with metals and ceramics. In fact, with 3D printed parts being used in two different jet engine platforms, GE built the first mass production additive facility in the U.S. in Auburn, Alabama, which is building parts and getting more machines on line every month. Today GE is the world’s largest user of additive technologies with metals.
“With the successful integration of 3D printed metal parts in two different jet engine platforms and the construction of GE Aviation’s $50 million state-of-the-art high-volume additive production plant in Auburn, Alabama, we achieved major milestones with our additive program in 2015,” said Prabhjot Singh, Manager of the Additive Manufacturing Lab at GE Global Research. “But we have only scratched the surface on additive’s potential. With even better design tools, machines and new materials, we can dramatically expand the additive industry’s footprint in manufacturing. That future will arrive faster through the strong ecosystem that 3MF is building to bring the right stakeholders together to accelerate new innovations and breakthroughs in this space.”
“GE Global Research is a recognized leader with real-world experience using 3D printing and additive manufacturing to drive innovation,” said Adrian Lannin, 3MF Consortium executive director. “We look forward to working with GE Global Research to enrich the 3MF standard and create new opportunities for both 3D printing and the additive manufacturing ecosystem.”
The 3MF Consortium was formed to close the gap between the capabilities of modern 3D printers and outdated file formats. The 3MF specification eliminates the problems associated with currently available file formats, resolving interoperability and functionality issues, and enabling companies to focus more on innovation. The first version of the 3MF specification is available now for download at no charge.
Two levels of 3MF Consortium membership are available: Founding and Associate. Members work collaboratively to develop, enhance and promote the 3MF specification.
About GE Global Research
GE Global Research is the hub of technology development for all of GE’s businesses. Our scientists and engineers redefine what’s possible, drive growth for our businesses, and find answers to some of the world’s toughest problems. We innovate 24 hours a day, with sites in Niskayuna, New York; San Ramon, California; Detroit, Michigan; Oklahoma City, Oklahoma; Bangalore, India; Shanghai, China; Munich, Germany; Tirat Carmel, Israel; Dhahran, Saudi Arabia; Rio de Janeiro, Brazil. Visit GE Global Research on the web at www.geglobalresearch.com. Connect with our technologists at www.geglobalresearch.com/blog and www.twitter.com/geresearch.
About the 3MF Consortium
Launched in 2015, the 3MF Consortium is a Joint Development Foundation project with the goal to define a 3D printing format that will allow design applications to send full-fidelity 3D models to a mix of other applications, platforms, services and printers. The 3MF (for 3D Manufacturing Format) specification eliminates the widespread issues with currently available file formats.
Founding members of the 3MF Consortium are: 3D Systems; Autodesk, Inc; Dassault Systèmes, SA.; FIT AG; GE Global Research; HP, Inc.; Materialise; Microsoft Corporation; Shapeways, Inc.; Siemens PLM Software; SLM Solutions Group AG; Stratasys, and Ultimaker. The starting point for the Consortium’s development of the 3MF specification was Microsoft’s donation of its 3D file format work-in-progress. More information about the 3MF Consortium and the 3MF specification is available at http://www.3mf.io.